APT33N90JCCU3 APT33N90JCCU3 ? rev 0 september, 2009 www.microsemi.com 1 ? 5 a s g d isotop ? absolute maximum ratings these devices are sensitive to electrostatic di scharge. proper handling pro cedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 900 v t c = 25c 33 i d continuous drain current t c = 80c 25 i dm pulsed drain current 75 a v gs gate - source voltage 20 v r dson drain - source on resistance 120 m p d maximum power dissipation t c = 25c 290 w i ar avalanche current (repetitive and non repetitive) 8.8 a e ar repetitive avalanche energy 2.9 e as single pulse avalanche energy 1940 mj application ? ac and dc motor control ? switched mode power supplies features ? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? isotop ? package (sot-227) ? very low stray inductance ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant isotop ? buck chopper super junction mosfet sic chopper diode v dss = 900v r dson = 120m max @ tj = 25c i d = 33a @ tc = 25c a d g s
APT33N90JCCU3 APT33N90JCCU3 ? rev 0 september, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 900v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 900v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 26a 100 120 m v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.5 3 3.5 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 6.8 c oss output capacitance v gs = 0v ; v ds = 100v f = 1mhz 0.33 nf q g total gate charge 270 q gs gate ? source charge 32 q gd gate ? drain charge v gs = 10v v bus = 400v i d = 26a 115 nc t d(on) turn-on delay time 70 t r rise time 20 t d(off) turn-off delay time 400 t f fall time inductive switching (125c) v gs = 10v v bus = 600v i d = 26a r g = 7.5 25 ns e on turn-on switching energy 0.9 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 600v i d = 26a ; r g = 7.5 0.75 mj e on turn-on switching energy 1.3 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 600v i d = 26a ; r g = 7.5 0.85 mj sic chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 32 200 i rm maximum reverse leakage current v r =1200v t j = 175c 56 1000 a i f dc forward current tc = 100c 10 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 10a t j = 175c 2.3 3 v q c total capacitive charge i f = 10a, v r = 600v di/dt =500a/s 40 nc f = 1mhz, v r = 200v 96 c total capacitance f = 1mhz, v r = 400v 69 pf
APT33N90JCCU3 APT33N90JCCU3 ? rev 0 september, 2009 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit coolmos 0.43 r thjc junction to case thermal resistance sic diode 1.65 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -40 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. typical coolmos performance curve hard switching zcs zvs 0 50 100 150 200 250 10 15 20 25 30 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =600v d=50% r g =7.5 ? t j =125c t c =75c switching energy vs current eon eoff 0 1 1 2 2 5 10152025303540 i d , drain current (a) eon and eoff (mj) v ds =600v r g =7.5 ? t j =125c l=100h on resistance vs temperature 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds(on) , drain to source on resistance (normalized) switching energy vs gate resistance eon eoff 0 1 2 3 5 101520253035 gate resistance (ohms) switching energy (mj) v ds =600v i d =26a t j =125c l=100h source gate drain anode
APT33N90JCCU3 APT33N90JCCU3 ? rev 0 september, 2009 www.microsemi.com 4 ? 5 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 6v 0 40 80 120 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics v gs =20, 8v 0 5 10 15 20 25 30 35 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature 900 925 950 975 1000 25 50 75 100 125 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage maximum safe operating area 10 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r d s on single pulse t j =150c t c =25c ciss crss coss 1 10 100 1000 10000 100000 0 25 50 75 100 125 150 175 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage 0 2 4 6 8 10 0 50 100 150 200 250 300 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage v ds =400v i d =26a t j =25c
APT33N90JCCU3 APT33N90JCCU3 ? rev 0 september, 2009 www.microsemi.com 5 ? 5 typical sic chopper diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 4 8 12 16 20 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 25 50 75 100 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 100 200 300 400 500 600 700 1 10 100 1000 v r reverse voltage c, capacitance (pf) ?coolmos? comprise a new family of transistors developed by in fineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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